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SMBT2222AE6327HTSA1 Tech Specifications

SMBT2222AE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature 150°C TJ
Published 2002
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 330mW
Terminal Form GULL WING
Frequency 300MHz
Number of Elements 1
Power Dissipation 330mW
Halogen Free Not Halogen Free
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 40V
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Transition Frequency 300MHz
Max Breakdown Voltage 40V
Emitter Base Voltage (VEBO) 6V
Max Junction Temperature (Tj) 150°C
Height 1.1mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Last Time Buy
Number of Terminations 3
Terminal Finish Tin (Sn)
Voltage - Rated DC 40V
Terminal Position DUAL
Current Rating 600mA
Base Part Number MBT2222A
Configuration SINGLE
Transistor Application SWITCHING
Gain Bandwidth Product 300MHz
Transistor Type NPN
Max Collector Current 600mA
Current - Collector Cutoff (Max) 10nA ICBO
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage 300mV
Collector Base Voltage (VCBO) 75V
hFE Min 35
Turn Off Time-Max (toff) 285ns
Radiation Hardening No
RoHS Status ROHS3 Compliant
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SMBT2222AE6327HTSA1 Documents

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