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SMBT3904E6327HTSA1 Tech Specifications

SMBT3904E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature 150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 330mW
Terminal Form GULL WING
Frequency 300MHz
Number of Elements 1
Power Dissipation 330mW
Halogen Free Not Halogen Free
Transistor Type NPN
Max Collector Current 200mA
Current - Collector Cutoff (Max) 50nA ICBO
Collector Emitter Breakdown Voltage 40V
Max Breakdown Voltage 40V
Emitter Base Voltage (VEBO) 6V
Turn On Time-Max (ton) 70ns
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Last Time Buy
Number of Terminations 3
Terminal Finish Tin (Sn)
Voltage - Rated DC 40V
Terminal Position DUAL
Current Rating 200mA
Base Part Number MBT3904
Configuration SINGLE
Transistor Application SWITCHING
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 1V
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
Transition Frequency 300MHz
Collector Base Voltage (VCBO) 60V
Turn Off Time-Max (toff) 250ns
Radiation Hardening No
RoHS Status ROHS3 Compliant
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