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SN7002NH6327XTSA2 Tech Specifications

SN7002NH6327XTSA2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2003
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Number of Elements 1
Power Dissipation-Max 360mW Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 2.4 ns
Rds On (Max) @ Id, Vgs 5 Ω @ 500mA, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 200mA Ta
Rise Time 3.2ns
Vgs (Max) ±20V
Turn-Off Delay Time 5.3 ns
Threshold Voltage 1.4V
Max Dual Supply Voltage 60V
Drain-source On Resistance-Max 5Ohm
Max Junction Temperature (Tj) 150°C
Height 1.1mm
Width 1.3mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, SIPMOS®
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Position DUAL
Pin Count 3
Number of Channels 1
Element Configuration Single
Power Dissipation 360mW
FET Type N-Channel
Vgs(th) (Max) @ Id 1.8V @ 26μA
Input Capacitance (Ciss) (Max) @ Vds 45pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 3.6 ns
Continuous Drain Current (ID) 200mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.2A
Drain to Source Breakdown Voltage 60V
Feedback Cap-Max (Crss) 4.2 pF
Length 2.9mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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SN7002NH6327XTSA2 Documents

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