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SPA03N60C3XKSA1 Tech Specifications

MOSFET N-CH 650V 3.2A TO-220

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Tube
Series CoolMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Current Rating 3.2A
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 29.7W
Turn On Delay Time 7 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.9V @ 135μA
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 12 ns
Continuous Drain Current (ID) 3.2A
JEDEC-95 Code TO-220AB
Drain to Source Breakdown Voltage 600V
Avalanche Energy Rating (Eas) 100 mJ
Length 10.36mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case TO-220-3 Full Pack
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2005
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin (Sn)
Voltage - Rated DC 650V
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Power Dissipation-Max 29.7W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.4 Ω @ 2A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 3.2A Tc
Rise Time 3ns
Vgs (Max) ±20V
Turn-Off Delay Time 64 ns
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 9.6A
Height 9.45mm
Width 4.57mm
RoHS Status RoHS Compliant
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SPA03N60C3XKSA1 Documents

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