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SPB18P06PGATMA1 Tech Specifications

MOSFET P-CH 60V 18.7A TO-263

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2006
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Terminal Finish Tin (Sn)
Voltage - Rated DC -60V
Terminal Form GULL WING
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 81.1W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Vgs(th) (Max) @ Id 4V @ 1mA
Current - Continuous Drain (Id) @ 25°C 18.7A Ta
Rise Time 5.8ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 11 ns
Continuous Drain Current (ID) -18.7A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 74.8A
Nominal Vgs -3 V
Length 10mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series SIPMOS®
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating -18.6A
Pin Count 4
Qualification Status Not Qualified
Number of Channels 1
Element Configuration Single
Power Dissipation 81.1W
Turn On Delay Time 12 ns
Rds On (Max) @ Id, Vgs 130m Ω @ 13.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds 860pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Drain to Source Voltage (Vdss) 60V
Vgs (Max) ±20V
Turn-Off Delay Time 25 ns
Threshold Voltage -3V
Drain to Source Breakdown Voltage -60V
Max Junction Temperature (Tj) 175°C
Height 4.5mm
Width 4.4mm
RoHS Status ROHS3 Compliant
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