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SPD04N50C3ATMA1 Tech Specifications

Trans MOSFET N-CH 500V 4.5A 3-Pin(2+Tab) TO-252 T/R

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2005
Part Status Not For New Designs
Max Operating Temperature 150°C
Voltage - Rated DC 560V
Current Rating 4.5A
Power Dissipation-Max 50W Tc
Turn On Delay Time 10 ns
Rds On (Max) @ Id, Vgs 950mOhm @ 2.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds 470pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Drain to Source Voltage (Vdss) 500V
Vgs (Max) ±20V
Continuous Drain Current (ID) 4.5A
Max Dual Supply Voltage 500V
Drain to Source Resistance 850mOhm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package PG-TO252-3-1
Packaging Tape & Reel (TR)
Series CoolMOS™
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation 50W
FET Type N-Channel
Vgs(th) (Max) @ Id 3.9V @ 200μA
Current - Continuous Drain (Id) @ 25°C 4.5A Tc
Rise Time 5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 70 ns
Gate to Source Voltage (Vgs) 20V
Input Capacitance 470pF
Rds On Max 950 mΩ
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