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SPD06N60C3ATMA1 Tech Specifications

Trans MOSFET N-CH 650V 6.2A 3-Pin(2+Tab) TO-252

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2005
Part Status Not For New Designs
Max Operating Temperature 150°C
Voltage - Rated DC 650V
Current Rating 6.2A
Power Dissipation 74W
FET Type N-Channel
Vgs(th) (Max) @ Id 3.9V @ 260μA
Current - Continuous Drain (Id) @ 25°C 6.2A Tc
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 6.2A
Max Dual Supply Voltage 600V
Drain to Source Resistance 680mOhm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package PG-TO252-3-1
Packaging Tape & Reel (TR)
Series CoolMOS™
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 74W Tc
Turn On Delay Time 7 ns
Rds On (Max) @ Id, Vgs 750mOhm @ 3.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±20V
Turn-Off Delay Time 52 ns
Gate to Source Voltage (Vgs) 20V
Input Capacitance 620pF
Rds On Max 750 mΩ
Lead Free Lead Free
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