SPD08N50C3ATMA1 Tech Specifications

MOSFET N-CH 500V 7.6A DPAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package PG-TO252-3-1
Packaging Tape & Reel (TR)
Series CoolMOS™
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Voltage - Rated DC 560V
Current Rating 7.6A
Power Dissipation-Max 83W Tc
Power Dissipation 83W
FET Type N-Channel
Vgs(th) (Max) @ Id 3.9V @ 350μA
Current - Continuous Drain (Id) @ 25°C 7.6A Tc
Rise Time 5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 7 ns
Continuous Drain Current (ID) 7.6A
Gate to Source Voltage (Vgs) 20V
Dual Supply Voltage 560V
Drain to Source Resistance 600mOhm
Nominal Vgs 3 V
Length 6.73mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2005
Part Status Not For New Designs
Termination SMD/SMT
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
Turn On Delay Time 6 ns
Rds On (Max) @ Id, Vgs 600mOhm @ 4.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Drain to Source Voltage (Vdss) 500V
Vgs (Max) ±20V
Turn-Off Delay Time 60 ns
Threshold Voltage 3V
Drain to Source Breakdown Voltage 500V
Input Capacitance 750pF
Rds On Max 600 mΩ
Height 2.41mm
Width 6.22mm
REACH SVHC No SVHC
Lead Free Lead Free
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