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SPD100N03S2L-04 Tech Specifications

MOSFET N-CH 30V 100A DPAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-252-5, DPak (4 Leads + Tab), TO-252AD
Operating Temperature -55°C~175°C TJ
Published 2003
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Voltage - Rated DC 30V
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G4
Number of Elements 1
Power Dissipation-Max 150W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 100μA
Current - Continuous Drain (Id) @ 25°C 100A Tc
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Continuous Drain Current (ID) 100A
Pulsed Drain Current-Max (IDM) 400A
RoHS Status Non-RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Part Status Obsolete
Number of Terminations 4
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating 100A
Pin Count 4
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.2m Ω @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3320pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 89.7nC @ 10V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.0063Ohm
Avalanche Energy Rating (Eas) 325 mJ
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