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SPI21N50C3XKSA1 Tech Specifications

MOSFET N-CH 560V 21A I2PAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2005
Part Status Not For New Designs
Max Operating Temperature 150°C
Voltage - Rated DC 560V
Current Rating 11.6A
Element Configuration Single
Turn On Delay Time 10 ns
Rds On (Max) @ Id, Vgs 190mOhm @ 13.1A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 21A Tc
Rise Time 5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 4.5 ns
Continuous Drain Current (ID) 21A
Max Dual Supply Voltage 500V
Input Capacitance 2.4nF
Rds On Max 190 mΩ
Length 10.36mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package PG-TO262-3-1
Packaging Tube
Series CoolMOS™
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 208W Tc
Power Dissipation 208W
FET Type N-Channel
Vgs(th) (Max) @ Id 3.9V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
Drain to Source Voltage (Vdss) 560V
Vgs (Max) ±20V
Turn-Off Delay Time 67 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 500V
Drain to Source Resistance 190mOhm
Height 9.45mm
Width 4.52mm
Lead Free Lead Free
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