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SPP11N60C3XKSA1 Tech Specifications

SPP11N60C3XKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2005
Part Status Not For New Designs
Max Operating Temperature 150°C
Voltage - Rated DC 650V
Current Rating 11A
Power Dissipation-Max 125W Tc
Turn On Delay Time 10 ns
Rds On (Max) @ Id, Vgs 380mOhm @ 7A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 11A Tc
Rise Time 5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 5 ns
Continuous Drain Current (ID) 11A
Max Dual Supply Voltage 600V
Input Capacitance 1.2nF
Rds On Max 380 mΩ
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Supplier Device Package PG-TO220-3-1
Packaging Tube
Series CoolMOS™
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation 125W
FET Type N-Channel
Vgs(th) (Max) @ Id 3.9V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Drain to Source Voltage (Vdss) 650V
Vgs (Max) ±20V
Turn-Off Delay Time 44 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
Drain to Source Resistance 380mOhm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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SPP11N60C3XKSA1 Documents

Download datasheets and manufacturer documentation for SPP11N60C3XKSA1

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