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SPS02N60C3 Tech Specifications

MOSFET N-CH 650V 1.8A TO251-3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-251-3 Stub Leads, IPak
Transistor Element Material SILICON
Packaging Tube
Series CoolMOS™
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Power Dissipation-Max 25W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 6 ns
Rds On (Max) @ Id, Vgs 3 Ω @ 1.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 12.5nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 12 ns
Continuous Drain Current (ID) 1.8A
Max Dual Supply Voltage 600V
Drain to Source Breakdown Voltage 650V
Dual Supply Voltage 650V
Nominal Vgs 3 V
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2005
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 25W
FET Type N-Channel
Vgs(th) (Max) @ Id 3.9V @ 80μA
Current - Continuous Drain (Id) @ 25°C 1.8A Tc
Rise Time 3ns
Vgs (Max) ±20V
Turn-Off Delay Time 68 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 3Ohm
Pulsed Drain Current-Max (IDM) 5.4A
Avalanche Energy Rating (Eas) 50 mJ
REACH SVHC Unknown
Lead Free Lead Free
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SPS02N60C3 Documents

Download datasheets and manufacturer documentation for SPS02N60C3

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