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SPW20N60CFDFKSA1 Tech Specifications

MOSFET N-CH 650V 20.7A TO-247

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
Series CoolMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Voltage - Rated DC 650V
Terminal Position SINGLE
Pin Count 3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 12 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 5V @ 1mA
Current - Continuous Drain (Id) @ 25°C 20.7A Tc
Rise Time 15ns
Vgs (Max) ±20V
Turn-Off Delay Time 59 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.22Ohm
Avalanche Energy Rating (Eas) 690 mJ
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2005
JESD-609 Code e3
Part Status Not For New Designs
Number of Terminations 3
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Current Rating 20.7A
Number of Elements 1
Power Dissipation-Max 208W Tc
Power Dissipation 35W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 220m Ω @ 13.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 124nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 6.4 ns
Continuous Drain Current (ID) 20.7A
Max Dual Supply Voltage 600V
Pulsed Drain Current-Max (IDM) 52A
Radiation Hardening No
Lead Free Lead Free
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