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SPW35N60C3FKSA1 Tech Specifications

MOSFET N-CH 650V 34.6A TO-247

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
Series CoolMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.9V @ 1.9mA
Current - Continuous Drain (Id) @ 25°C 34.6A Tc
Drain to Source Voltage (Vdss) 650V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 34.6A
Pulsed Drain Current-Max (IDM) 103.8A
Avalanche Energy Rating (Eas) 1500 mJ
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Operating Temperature -55°C~150°C TJ
Published 2005
JESD-609 Code e3
Part Status Not For New Designs
Number of Terminations 3
Additional Feature AVALANCHE RATED, HIGH VOLTAGE
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Power Dissipation-Max 313W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 100m Ω @ 21.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
JEDEC-95 Code TO-247AA
Drain-source On Resistance-Max 0.1Ohm
DS Breakdown Voltage-Min 600V
RoHS Status ROHS3 Compliant
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