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SPW52N50C3FKSA1 Tech Specifications

MOSFET N-CH 560V 52A TO-247

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mounting Type Through Hole
Surface Mount NO
Operating Temperature -55°C~150°C TJ
Published 2005
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Power Dissipation-Max 417W Tc
FET Type N-Channel
Vgs(th) (Max) @ Id 3.9V @ 2.7mA
Current - Continuous Drain (Id) @ 25°C 52A Tc
Drain to Source Voltage (Vdss) 560V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.07Ohm
DS Breakdown Voltage-Min 500V
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
Series CoolMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Terminal Position SINGLE
Reach Compliance Code compliant
Pin Count 3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs 70m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds 6800pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 290nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain Current-Max (Abs) (ID) 52A
Pulsed Drain Current-Max (IDM) 156A
Avalanche Energy Rating (Eas) 1800 mJ
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