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IKW25N120T2 Tech Specifications

IGBT 1200V 50A 349W TO247-3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Surface Mount NO
Published 2008
Part Status Active
ECCN Code EAR99
Min Operating Temperature -40°C
Terminal Form THROUGH-HOLE
Number of Elements 1
Element Configuration Single
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Max Collector Current 50A
JEDEC-95 Code TO-247AD
Collector Emitter Saturation Voltage 2.2V
Turn Off Time-Nom (toff) 504 ns
Gate-Emitter Thr Voltage-Max 6.4V
Length 16.13mm
Radiation Hardening No
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case TO-247-3
Number of Pins 3
Pbfree Code yes
Number of Terminations 3
Max Operating Temperature 175°C
Subcategory Insulated Gate BIP Transistors
Pin Count 3
Power Dissipation-Max 349W
Case Connection COLLECTOR
Forward Voltage 1.65V
Collector Emitter Voltage (VCEO) 1.2kV
Reverse Recovery Time 195 ns
Collector Emitter Breakdown Voltage 1.2kV
Turn On Time 49 ns
Gate-Emitter Voltage-Max 20V
Height 21.1mm
Width 5.21mm
REACH SVHC No SVHC
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IKW25N120T2 Documents

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