IPP60R190E6 Tech Specifications

MOSFET N-CH 600V 20.2A TO220

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Package / Case TO-220-3
Number of Pins 3
Pbfree Code yes
Number of Terminations 3
Min Operating Temperature -55°C
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Power Dissipation-Max 151W
Power Dissipation 151W
Transistor Application SWITCHING
Rise Time 10ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 90 ns
JEDEC-95 Code TO-220AB
Drain to Source Breakdown Voltage 650V
Avalanche Energy Rating (Eas) 418 mJ
Drain to Source Resistance 170mOhm
Capacitance - Input 1.4nF
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Surface Mount NO
Published 2008
Part Status Active
Max Operating Temperature 150°C
Subcategory FET General Purpose Power
Terminal Form THROUGH-HOLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 12 ns
Halogen Free Halogen Free
Drain to Source Voltage (Vdss) 600V
Fall Time (Typ) 8 ns
Continuous Drain Current (ID) 20.2A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 59A
FET Technology METAL-OXIDE SEMICONDUCTOR
Rds On Max 190 mΩ
REACH SVHC No SVHC
Lead Free Lead Free
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IPP60R190E6 Documents

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