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IPW90R120C3 Tech Specifications

INFINEON - IPW90R120C3 - Power MOSFET, N Channel, 900 V, 36 A, 0.1 ohm, TO-247, Through Hole

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon
Factory Lead Time 3 Weeks
Contact Plating Tin
Surface Mount NO
Pbfree Code yes
Termination Through Hole
Min Operating Temperature -55°C
Pin Count 3
Power Dissipation-Max 417W
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 70 ns
Transistor Application SWITCHING
Drain to Source Voltage (Vdss) 900V
Fall Time (Typ) 24 ns
Continuous Drain Current (ID) 36A
Drain to Source Breakdown Voltage 900V
Dual Supply Voltage 900V
Drain to Source Resistance 120mOhm
Nominal Vgs 3 V
Height 21.1mm
Width 5.21mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case TO-247-3
Number of Pins 3
Number of Terminations 3
Max Operating Temperature 150°C
Subcategory FET General Purpose Power
Number of Elements 1
Element Configuration Single
Power Dissipation 417W
Voltage - Threshold 3V
Rise Time 20ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 400 ns
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 96A
FET Technology METAL-OXIDE SEMICONDUCTOR
Rds On Max 120 mΩ
Capacitance - Input 6.8nF
Length 16.13mm
Radiation Hardening No
RoHS Status RoHS Compliant
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IPW90R120C3 Documents

Download datasheets and manufacturer documentation for IPW90R120C3

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