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SPA08N50C3 Tech Specifications

INFINEON - SPA08N50C3XKSA1 - MOSFET, N, 500V, TO-220F

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Surface Mount NO
Packaging Bulk
Pbfree Code yes
Number of Terminations 3
Min Operating Temperature -55°C
Subcategory FET General Purpose Power
Terminal Form THROUGH-HOLE
Current Rating 7.6A
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 32W
Turn On Delay Time 6 ns
Transistor Application SWITCHING
Rise Time 5ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 60 ns
JEDEC-95 Code TO-220AB
Drain to Source Breakdown Voltage 560V
FET Technology METAL-OXIDE SEMICONDUCTOR
Rds On Max 600 mΩ
Height 9.83mm
Width 4.85mm
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case TO-220-3
Number of Pins 3
Published 2005
Part Status Discontinued
Max Operating Temperature 150°C
Additional Feature AVALANCHE RATED
Voltage - Rated DC 560V
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Power Dissipation-Max 32W
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Voltage - Threshold 3V
Halogen Free Halogen Free
Drain to Source Voltage (Vdss) 560V
Fall Time (Typ) 7 ns
Continuous Drain Current (ID) 7.6A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 22.8A
Drain to Source Resistance 600mOhm
Capacitance - Input 750pF
Length 10.65mm
REACH SVHC No SVHC
Lead Free Lead Free
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SPA08N50C3 Documents

Download datasheets and manufacturer documentation for SPA08N50C3

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