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BSC196N10NSGATMA1 Tech Specifications

MOSFET N-CH 100V 45A TDSON-8

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer International Rectifier (Infineon Technologies)
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 4V @ 42µA
Technology MOSFET (Metal Oxide)
Series OptiMOS™
Power Dissipation (Max) 78W (Tc)
Package / Case 8-PowerTDFN
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 100V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package PG-TDSON-8
Rds On (Max) @ Id, Vgs 19.6 mOhm @ 45A, 10V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 2300pF @ 50V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 8.5A (Ta), 45A (Tc)
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BSC196N10NSGATMA1 Documents

Download datasheets and manufacturer documentation for BSC196N10NSGATMA1

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