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BSC750N10NDGATMA1 Tech Specifications

MOSFET 2N-CH 100V 3.2A 8TDSON

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Manufacturer International Rectifier (Infineon Technologies)
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 4V @ 12µA
Series OptiMOS™
Power - Max 26W
Package / Case 8-PowerVDFN
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 720pF @ 50V
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 3.2A
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Supplier Device Package PG-TDSON-8 Dual
Rds On (Max) @ Id, Vgs 75 mOhm @ 13A, 10V
Packaging Tape & Reel (TR)
Other Names BSC750N10ND G BSC750N10ND G-ND BSC750N10ND GTR BSC750N10ND GTR-ND BSC750N10NDG BSC750N10NDGATMA1TR SP000359610
Mounting Type Surface Mount
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
FET Feature Standard
Detailed Description Mosfet Array 2 N-Channel (Dual) 100V 3.2A 26W Surface Mount PG-TDSON-8 Dual
Base Part Number BSC750N10
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BSC750N10NDGATMA1 Documents

Download datasheets and manufacturer documentation for BSC750N10NDGATMA1

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BSC750N10ND IC International Rectifier (Infineon Technologies) Specialized Hot ICs 461
BSC750N10NDG INFINEON Specialized Hot ICs 8166
BSC750N10NDG MOS International Rectifier (Infineon Technologies) Specialized Hot ICs 11024
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