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IPB020NE7N3 G Tech Specifications

IPB020NE7N3 G Infineon Technologies

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer International Rectifier (Infineon Technologies)
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 3.8V @ 273µA
Technology MOSFET (Metal Oxide)
Series OptiMOS™
Power Dissipation (Max) 300W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 206nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 75V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package PG-TO263-2
Rds On (Max) @ Id, Vgs 2 mOhm @ 100A, 10V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 14400pF @ 37.5V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
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IPB020NE7N3 G Documents

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