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IPB042N10N3GATMA1 Tech Specifications

MOSFET N-CH 100V 100A TO263-3

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer International Rectifier (Infineon Technologies)
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 3.5V @ 150µA
Technology MOSFET (Metal Oxide)
Series OptiMOS™
Power Dissipation (Max) 214W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C ~ 175°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 8410pF @ 50V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Detailed Description N-Channel 100V 100A (Tc) 214W (Tc) Surface Mount D²PAK (TO-263AB)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package D²PAK (TO-263AB)
Rds On (Max) @ Id, Vgs 4.2 mOhm @ 50A, 10V
Packaging Original-Reel®
Other Names IPB042N10N3 GDKR IPB042N10N3 GDKR-ND IPB042N10N3GATMA1DKR
Mounting Type Surface Mount
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 117nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
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