IPB065N15N3GATMA1 Tech Specifications

MOSFET N-CH 150V 130A TO263-7

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer International Rectifier (Infineon Technologies)
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 4V @ 270µA
Technology MOSFET (Metal Oxide)
Series OptiMOS™
Power Dissipation (Max) 300W (Tc)
Package / Case TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Operating Temperature -55°C ~ 175°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 7300pF @ 75V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Detailed Description N-Channel 150V 130A (Tc) 300W (Tc) Surface Mount PG-TO263-7
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package PG-TO263-7
Rds On (Max) @ Id, Vgs 6.5 mOhm @ 100A, 10V
Packaging Tape & Reel (TR)
Other Names IPB065N15N3 G IPB065N15N3 G-ND IPB065N15N3 GTR-ND IPB065N15N3G IPB065N15N3GATMA1TR SP000521724
Mounting Type Surface Mount
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 93nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 130A (Tc)
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