IRF6641TR1PBF Tech Specifications

MOSFET N-CH 200V 4.6A DIRECTFET

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer International Rectifier (Infineon Technologies)
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 4.9V @ 150µA
Supplier Device Package DIRECTFET™ MZ
Rds On (Max) @ Id, Vgs 59.9 mOhm @ 5.5A, 10V
Packaging Tape & Reel (TR)
Operating Temperature -40°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 2290pF @ 25V
FET Type N-Channel
Drain to Source Voltage (Vdss) 200V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Technology MOSFET (Metal Oxide)
Series HEXFET®
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Package / Case DirectFET™ Isometric MZ
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 4.6A (Ta), 26A (Tc)
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IRF6641TR1PBF Documents

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