IRF7665S2TR1PBF Tech Specifications

MOSFET N-CH 100V 4.1A DFET SB

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer International Rectifier (Infineon Technologies)
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 5V @ 25µA
Supplier Device Package DIRECTFET SB
Power Dissipation (Max) 2.4W (Ta), 30W (Tc)
Package / Case DirectFET™ Isometric SB
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 4.1A (Ta), 14.4A (Tc)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Technology MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs 62 mOhm @ 8.9A, 10V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 515pF @ 25V
FET Type N-Channel
Drain to Source Voltage (Vdss) 100V
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