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DTD113ECHZGT116 Tech Specifications

500MA/50V DIGITAL TRANSISTOR (WI

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer LAPIS Semiconductor
Factory Lead Time 3 Weeks
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Supplier Device Package SST3
Resistor - Emitter Base (R2) 1 kOhms
Power - Max 200mW
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Manufacturer Standard Lead Time 7 Weeks
Frequency - Transition 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 33 @ 50mA, 5V
Current - Collector (Ic) (Max) 500mA
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Transistor Type NPN - Pre-Biased + Diode
Series Automotive, AEC-Q101
Resistor - Base (R1) 1 kOhms
Packaging Tape & Reel (TR)
Other Names DTD113ECHZGT116TR
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased + Diode 500mA 200MHz 200mW Surface Mount SST3
Current - Collector Cutoff (Max) -
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DTD113ECHZGT116 Documents

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