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DTD123TCHZGT116 Tech Specifications

500MA/40V DIGITAL TRANSISTOR (WI

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer LAPIS Semiconductor
Factory Lead Time 3 Weeks
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Supplier Device Package SST3
Resistor - Base (R1) 2.2 kOhms
Packaging Cut Tape (CT)
Other Names DTD123TCHZGT116CT
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased + Diode 500mA 200MHz 200mW Surface Mount SST3
Current - Collector Cutoff (Max) 500nA (ICBO)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Transistor Type NPN - Pre-Biased + Diode
Series Automotive, AEC-Q101
Power - Max 200mW
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Manufacturer Standard Lead Time 7 Weeks
Frequency - Transition 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA, 5V
Current - Collector (Ic) (Max) 500mA
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DTD123TCHZGT116 Documents

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