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DN2450K4-G Tech Specifications

MOSFET MOSFET DEPLETION MODE 500V 10 Ohms

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Microchip Technology
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 3.949996g
Operating Temperature -55°C~150°C TJ
Published 2009
Part Status Active
Number of Terminations 2
Additional Feature LOW THRESHOLD
Subcategory FET General Purpose Power
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation 2.5W
Turn On Delay Time 15 ns
Transistor Application SWITCHING
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 25V
Rise Time 20ns
Vgs (Max) ±20V
Turn-Off Delay Time 15 ns
JEDEC-95 Code TO-252AA
Drain to Source Breakdown Voltage 500V
FET Feature Depletion Mode
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
HTS Code 8541.90.00.00
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10 Ω @ 300mA, 0V
Current - Continuous Drain (Id) @ 25°C 350mA Tj
Drive Voltage (Max Rds On,Min Rds On) 0V
Fall Time (Typ) 15 ns
Continuous Drain Current (ID) 350mA
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 1A
REACH SVHC No SVHC
Lead Free Lead Free
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DN2450K4-G Documents

Download datasheets and manufacturer documentation for DN2450K4-G

  • Datasheets

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