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LN100LA-G Tech Specifications

MOSFET 1200V Cascoded N-Channel MOSFET

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Microchip Technology
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 6-VFLGA
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Part Status Obsolete
Number of Terminations 6
Max Power Dissipation 350mW
Terminal Form BUTT
[email protected] Reflow Temperature-Max (s) 40
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Transistor Application AMPLIFIER
Vgs(th) (Max) @ Id 1.6V @ 10μA
Drain to Source Voltage (Vdss) 1200V 1.2kV
Gate to Source Voltage (Vgs) 1.6V
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 6
Operating Temperature -25°C~125°C TJ
Published 2014
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Number of Elements 2
Element Configuration Dual
FET Type 2 N-Channel (Cascoded)
Rds On (Max) @ Id, Vgs 3000 Ω @ 2mA, 2.8V
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Continuous Drain Current (ID) 3mA
Drain to Source Breakdown Voltage 600V
FET Feature Standard
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LN100LA-G Documents

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LN100LA-G brand manufacturers: Microchip Technology, Bonchip stock, LN100LA-G reference price. LN100LA-G parameters, LN100LA-G Datasheet PDF and pin diagram description download.You can use the LN100LA-G Pluggable Connectors, DSP Datesheet PDF, find LN100LA-G pin diagram and circuit diagram and usage method of function, LN100LA-G electronics tutorials.You can download from the Bonchip.
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