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TC8020K6-G-M937 Tech Specifications

Trans MOSFET N/P-CH 200V 56-Pin QFN EP T/R

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Microchip Technology
Factory Lead Time 3 Weeks
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Weight 191.387631mg
Operating Temperature -55°C~150°C TJ
Published 2012
Part Status Active
Number of Terminations 56
Terminal Form NO LEAD
Configuration COMPLEX
Operating Mode ENHANCEMENT MODE
FET Type 6 N and 6 P-Channel
Rds On (Max) @ Id, Vgs 8 Ω @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Drain to Source Voltage (Vdss) 200V
Fall Time (Typ) 15 ns
Continuous Drain Current (ID) 3.2A
DS Breakdown Voltage-Min 200V
FET Feature Standard
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 56-VFQFN Exposed Pad
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Pbfree Code yes
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Terminal Position QUAD
Number of Elements 6
Number of Channels 12
Turn On Delay Time 10 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.4V @ 1mA
Rise Time 15ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Turn-Off Delay Time 20 ns
Drain-source On Resistance-Max 8Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status ROHS3 Compliant
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TC8020K6-G-M937 Documents

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