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TN0610N3-G Tech Specifications

MOSFET N-CH 100V 500MA TO92-3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Microchip Technology
Factory Lead Time 3 Weeks
Factory Lead Time 20 Weeks
Mount Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Weight 453.59237mg
Operating Temperature -55°C~150°C TJ
Published 2013
Part Status Active
Number of Terminations 3
Additional Feature LOW THRESHOLD, LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 1W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 6 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 1mA
Current - Continuous Drain (Id) @ 25°C 500mA Tj
Drive Voltage (Max Rds On,Min Rds On) 3V 10V
Fall Time (Typ) 16 ns
Continuous Drain Current (ID) 500mA
Drain Current-Max (Abs) (ID) 0.5A
Drain to Source Breakdown Voltage 100V
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Bulk
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position BOTTOM
Number of Channels 1
Element Configuration Single
Power Dissipation 1W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.5 Ω @ 750mA, 10V
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V
Rise Time 14ns
Vgs (Max) ±20V
Turn-Off Delay Time 16 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 2Ohm
Radiation Hardening No
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