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TN2124K1-G Tech Specifications

Mosfet; N-channel Enhancement-mode; 240V; 15 OHM3 SOT-23T/R

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Microchip Technology
Factory Lead Time 3 Weeks
Factory Lead Time 5 Weeks
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOW THRESHOLD
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 40
Number of Elements 1
Power Dissipation-Max 360mW Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 4 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 1mA
Current - Continuous Drain (Id) @ 25°C 134mA Tj
Drive Voltage (Max Rds On,Min Rds On) 3V 4.5V
Fall Time (Typ) 2 ns
Continuous Drain Current (ID) 134mA
Drain to Source Breakdown Voltage 240V
Height 950μm
Width 1.3mm
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Weight 1.437803g
Operating Temperature -55°C~150°C TJ
Published 2005
Part Status Active
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Number of Channels 1
Element Configuration Single
Power Dissipation 360mW
FET Type N-Channel
Rds On (Max) @ Id, Vgs 15 Ω @ 120mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Rise Time 2ns
Vgs (Max) ±20V
Turn-Off Delay Time 7 ns
Gate to Source Voltage (Vgs) 20V
Feedback Cap-Max (Crss) 5 pF
Length 2.9mm
RoHS Status ROHS3 Compliant
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TN2124K1-G Documents

Download datasheets and manufacturer documentation for TN2124K1-G

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TN2124K1 39K Specialized Hot ICs 6162
TN2124K1-G Micrel / Microchip Technology Transistors - FETs, MOSFETs - Single 11442

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