TN2640N3-G Tech Specifications

MOSFET N-CH 400V 0.22A TO92-3

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Microchip Technology
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Bulk
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 740mW Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 4 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 2mA
Current - Continuous Drain (Id) @ 25°C 220mA Tj
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 22 ns
Continuous Drain Current (ID) 220mA
Drain Current-Max (Abs) (ID) 0.22A
Drain to Source Breakdown Voltage 400V
Length 5.21mm
Radiation Hardening No
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Weight 453.59237mg
Operating Temperature -55°C~150°C TJ
Published 2013
Part Status Active
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Terminal Position BOTTOM
Number of Channels 1
Element Configuration Single
Power Dissipation 740mW
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5 Ω @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds 225pF @ 25V
Rise Time 15ns
Vgs (Max) ±20V
Turn-Off Delay Time 20 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 5Ohm
Height 5.33mm
Width 4.19mm
RoHS Status ROHS3 Compliant
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