TP2104N3-G Tech Specifications

Trans MOSFET P-CH 40V 0.25A 3-Pin TO-92

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Microchip Technology
Factory Lead Time 3 Weeks
Factory Lead Time 6 Weeks
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Bulk
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOW THRESHOLD
Terminal Position BOTTOM
[email protected] Reflow Temperature-Max (s) NOT APPLICABLE
Number of Elements 1
Power Dissipation-Max 740mW Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 4 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 1mA
Current - Continuous Drain (Id) @ 25°C 175mA Tj
Drain to Source Voltage (Vdss) 40V
Vgs (Max) ±20V
Turn-Off Delay Time 5 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -40V
Length 5.21mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Weight 453.59237mg
Operating Temperature -55°C~150°C TJ
Published 2013
Part Status Active
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT APPLICABLE
Qualification Status Not Qualified
Number of Channels 1
Element Configuration Single
Power Dissipation 740mW
FET Type P-Channel
Rds On (Max) @ Id, Vgs 6 Ω @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V
Rise Time 4ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 4 ns
Continuous Drain Current (ID) -250mA
Drain-source On Resistance-Max 6Ohm
Height 5.33mm
Width 4.19mm
Lead Free Lead Free
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