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VN2210N2 Tech Specifications

Trans MOSFET N-CH 100V 1.7A 3-Pin TO-39

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Microchip Technology
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2011
Part Status Active
Number of Terminations 3
Terminal Finish NICKEL GOLD
Subcategory FET General Purpose Power
Terminal Position BOTTOM
Number of Elements 1
Power Dissipation-Max 360mW Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 350m Ω @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds 500pF @ 25V
Rise Time 10ns
Vgs (Max) ±20V
Turn-Off Delay Time 50 ns
Gate to Source Voltage (Vgs) 20V
Feedback Cap-Max (Crss) 65 pF
Length 9.4mm
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Transistor Element Material SILICON
Packaging Bulk
JESD-609 Code e4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature HIGH INPUT IMPEDANCE
Technology MOSFET (Metal Oxide)
Terminal Form WIRE
Number of Channels 1
Element Configuration Single
Power Dissipation 6W
Turn On Delay Time 10 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.4V @ 10mA
Current - Continuous Drain (Id) @ 25°C 1.7A Tj
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Fall Time (Typ) 30 ns
Continuous Drain Current (ID) 1.7A
Drain to Source Breakdown Voltage 100V
Height 6.6mm
Width 9.4mm
RoHS Status Non-RoHS Compliant
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VN2210N2 Documents

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