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IXGK120N60B3 Tech Specifications

DISC IGBT PT-MID FREQUENCY TO-26

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer IXYS
Factory Lead Time 3 Weeks
Factory Lead Time 1 Weeks
Package / Case TO-264-3, TO-264AA
Transistor Element Material SILICON
Series GenX3™
Part Status Active
Subcategory Insulated Gate BIP Transistors
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Case Connection COLLECTOR
Power - Max 780W
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 600V
Power Dissipation-Max (Abs) 780W
Test Condition 480V, 100A, 2 Ω, 15V
Turn Off Time-Nom (toff) 520 ns
Gate Charge 465nC
Td (on/off) @ 25°C 40ns/227ns
Gate-Emitter Voltage-Max 20V
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Operating Temperature -55°C~150°C TJ
Pbfree Code yes
Number of Terminations 3
Terminal Position SINGLE
Reach Compliance Code compliant
Pin Count 3
Qualification Status Not Qualified
Configuration SINGLE
Input Type Standard
Transistor Application POWER CONTROL
Reverse Recovery Time 87ns
Current - Collector (Ic) (Max) 280A
Turn On Time 123 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 100A
IGBT Type PT
Current - Collector Pulsed (Icm) 600A
Switching Energy 2.9mJ (on), 3.5mJ (off)
Gate-Emitter Thr Voltage-Max 5V
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