MDS60L Tech Specifications

TRANS RF BIPO 120W 4A 55AW1

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Manufacturer Microsemi
Factory Lead Time 3 Weeks
Voltage - Collector Emitter Breakdown (Max) 65V
Supplier Device Package 55AW
Packaging Bulk
Operating Temperature 200°C (TJ)
Mounting Type Chassis Mount
Frequency - Transition 1.03GHz ~ 1.09GHz
Current - Collector (Ic) (Max) 4A
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Transistor Type NPN
Power - Max 120W
Package / Case 55AW
Noise Figure (dB Typ @ f) -
Gain 10dB
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 500mA, 5V
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MDS60L Documents

Download datasheets and manufacturer documentation for MDS60L

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MDS60L brand manufacturers: Microsemi, Bonchip stock, MDS60L reference price. MDS60L parameters, MDS60L Datasheet PDF and pin diagram description download.You can use the MDS60L Pluggable Connectors, DSP Datesheet PDF, find MDS60L pin diagram and circuit diagram and usage method of function, MDS60L electronics tutorials.You can download from the Bonchip.
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