15GN01MA-TL-E Tech Specifications

Bipolar Transistors - BJT BIP NPN 50MA 8V FT=1.5G

Product Attribute Attribute Value
Category Discrete Semiconductors / RF BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature 150°C TJ
Published 2011
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin/Bismuth (Sn/Bi)
Max Power Dissipation 400mW
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Configuration Single
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 8V
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 10mA 5V
Transition Frequency 1000MHz
Collector Base Voltage (VCBO) 15V
hFE Min 200
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status LIFETIME (Last Updated: 1 week ago)
Package / Case 3-SMD, Gull Wing
Number of Pins 3
Packaging Tape & Reel (TR)
JESD-609 Code e6
Part Status Obsolete
ECCN Code EAR99
Subcategory Other Transistors
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 3
Power - Max 400mW
Transistor Type NPN
Max Collector Current 50mA
Collector Emitter Breakdown Voltage 8V
Frequency - Transition 1.5GHz
Emitter Base Voltage (VEBO) 3V
RoHS Status RoHS Compliant
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15GN01MA-TL-E Documents

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