2N5210BU Tech Specifications

2N5210BU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 6 Weeks
Mount Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Weight 179mg
Operating Temperature -55°C~150°C TJ
Published 2002
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 625mW
Current Rating 100mA
Base Part Number 2N5210
Element Configuration Single
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100μA 5V
Vce Saturation (Max) @ Ib, Ic 700mV @ 1mA, 10mA
Transition Frequency 30MHz
Collector Base Voltage (VCBO) 50V
hFE Min 200
Length 5.2mm
Radiation Hardening No
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status LAST SHIPMENTS (Last Updated: 6 days ago)
Mounting Type Through Hole
Number of Pins 3
Transistor Element Material SILICON
Packaging Bulk
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin (Sn)
Voltage - Rated DC 50V
Terminal Position BOTTOM
Frequency 30MHz
Number of Elements 1
Power Dissipation 625mW
Gain Bandwidth Product 30MHz
Transistor Type NPN
Max Collector Current 100mA
Current - Collector Cutoff (Max) 50nA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 700mV
Emitter Base Voltage (VEBO) 4.5V
Height 5.33mm
Width 4.19mm
REACH SVHC No SVHC
Lead Free Lead Free
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2N5210BU Documents

Download datasheets and manufacturer documentation for 2N5210BU

  • Datasheets

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