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2N5550BU Tech Specifications

2N5550BU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Mount Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Weight 178.2mg
Packaging Bulk
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 625mW
Frequency 300MHz
Number of Elements 1
Power Dissipation 625mW
Transistor Type NPN
Max Collector Current 600mA
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 140V
Collector Base Voltage (VCBO) 160V
hFE Min 60
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Number of Pins 3
Operating Temperature 150°C TJ
Published 2007
Part Status Obsolete
Voltage - Rated DC 140V
Current Rating 600mA
Base Part Number 2N5550
Element Configuration Single
Gain Bandwidth Product 300MHz
Collector Emitter Voltage (VCEO) 140V
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA
Collector Emitter Saturation Voltage 250mV
Emitter Base Voltage (VEBO) 6V
RoHS Status RoHS Compliant
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2N5550BU Documents

Download datasheets and manufacturer documentation for 2N5550BU

  • Datasheets

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