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2N5655G Tech Specifications

2N5655G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Contact Plating Tin
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Transistor Element Material SILICON
Packaging Bulk
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Subcategory Other Transistors
Max Power Dissipation 20W
Current Rating 500mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 10MHz
Transistor Type NPN
Max Collector Current 500mA
Current - Collector Cutoff (Max) 100μA
Collector Emitter Breakdown Voltage 250V
Collector Emitter Saturation Voltage 1V
Emitter Base Voltage (VEBO) 6V
Height 6.35mm
Width 6.35mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Mounting Type Through Hole
Surface Mount NO
Weight 4.535924g
Operating Temperature -65°C~150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC 250V
Peak Reflow Temperature (Cel) 260
Frequency 10MHz
Base Part Number 2N5655
Number of Elements 1
Power Dissipation 20W
Halogen Free Halogen Free
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 250V
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 100mA 10mV
Vce Saturation (Max) @ Ib, Ic 10V @ 100mA, 500mA
Transition Frequency 10MHz
Collector Base Voltage (VCBO) 275V
hFE Min 30
Length 6.35mm
Radiation Hardening No
RoHS Status RoHS Compliant
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2N5655G Documents

Download datasheets and manufacturer documentation for 2N5655G

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