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2N6107G Tech Specifications

2N6107G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 5 Weeks
Contact Plating Tin
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Additional Feature LEADFORM OPTIONS ARE AVAILABLE
Voltage - Rated DC -70V
Peak Reflow Temperature (Cel) 260
Frequency 10MHz
Base Part Number 2N6107
Number of Elements 1
Power Dissipation 40W
Transistor Application SWITCHING
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 70V
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 2A 4V
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 70V
Collector Emitter Saturation Voltage 3.5V
Emitter Base Voltage (VEBO) 5V
Height 15.748mm
Width 4.826mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Through Hole
Surface Mount NO
Weight 4.535924g
Operating Temperature -65°C~150°C TJ
Published 2006
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 40W
Current Rating -7A
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Element Configuration Single
Case Connection COLLECTOR
Gain Bandwidth Product 10MHz
Transistor Type PNP
Max Collector Current 7A
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 3.5V @ 3A, 7A
Transition Frequency 10MHz
Collector Base Voltage (VCBO) 80V
hFE Min 30
Length 10.2616mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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2N6107G Documents

Download datasheets and manufacturer documentation for 2N6107G

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