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2SA1419S-TD-H Tech Specifications

2SA1419S-TD-H datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 9 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e6
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin/Bismuth (Sn/Bi)
Max Power Dissipation 500mW
Terminal Form FLAT
Pin Count 3
Configuration SINGLE
Power - Max 500mW
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 160V
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 100mA 5V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Transition Frequency 120MHz
Collector Base Voltage (VCBO) 180V
hFE Min 100
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Package / Case TO-243AA
Number of Pins 3
Operating Temperature 150°C TJ
Published 2012
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.21.00.75
Terminal Position SINGLE
Base Part Number 2SA1419
Number of Elements 1
Case Connection COLLECTOR
Halogen Free Halogen Free
Transistor Type PNP
Max Collector Current 1.5A
Current - Collector Cutoff (Max) 1μA ICBO
Collector Emitter Breakdown Voltage 160V
Frequency - Transition 120MHz
Emitter Base Voltage (VEBO) 6V
RoHS Status RoHS Compliant
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2SA1419S-TD-H Documents

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