2SA2012-TD-E Tech Specifications

2SA2012-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 9 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e6
Part Status Active
Number of Terminations 3
Terminal Finish Tin/Bismuth (Sn/Bi)
Max Power Dissipation 3.5W
Terminal Form FLAT
Reach Compliance Code not_compliant
Pin Count 3
Configuration SINGLE
Transistor Application SWITCHING
Transistor Type PNP
Max Collector Current 5A
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 30V
Transition Frequency 350MHz
Frequency - Transition 420MHz
Emitter Base Voltage (VEBO) 5V
Length 4.5mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Package / Case TO-243AA
Number of Pins 3
Operating Temperature 150°C TJ
Published 2010
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Case Connection COLLECTOR
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 30V
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA 2V
Vce Saturation (Max) @ Ib, Ic 210mV @ 30mA, 1.5A
Max Frequency 1MHz
Collector Emitter Saturation Voltage -260mV
Collector Base Voltage (VCBO) 30V
Height 1.5mm
Width 2.5mm
Lead Free Lead Free
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