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2SA2169-TL-E Tech Specifications

2SA2169-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Mounting Type Surface Mount
Number of Pins 3
Packaging Tape & Reel (TR)
JESD-609 Code e6
Part Status Active
ECCN Code EAR99
Max Power Dissipation 950mW
Frequency 130MHz
Number of Elements 1
Power Dissipation 950mW
Transistor Type PNP
Max Collector Current 10A
Current - Collector Cutoff (Max) 10μA ICBO
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Emitter Base Voltage (VEBO) 6V
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE, NOT REC (Last Updated: 4 days ago)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature 150°C TJ
Published 2007
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin/Bismuth (Sn/Bi)
Reach Compliance Code not_compliant
Pin Count 3
Element Configuration Single
Gain Bandwidth Product 130MHz
Collector Emitter Voltage (VCEO) -580mV
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A 2V
Vce Saturation (Max) @ Ib, Ic 580mV @ 250mA, 5A
Collector Emitter Saturation Voltage -290mV
Collector Base Voltage (VCBO) 50V
hFE Min 200
Lead Free Lead Free
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