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2SB1122S-TD-E Tech Specifications

2SB1122S-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Contact Plating Tin
Package / Case TO-243AA
Number of Pins 3
Packaging Tape & Reel (TR)
JESD-609 Code e6
Part Status Active
ECCN Code EAR99
Max Power Dissipation 500mW
Frequency 150MHz
Pin Count 3
Element Configuration Single
Gain Bandwidth Product 150MHz
Transistor Type PNP
Max Collector Current 1A
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Emitter Base Voltage (VEBO) 5V
Height 1.5mm
Width 2.5mm
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature 150°C TJ
Published 2010
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Other Transistors
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation 500mW
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 2V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Saturation Voltage -180mV
Collector Base Voltage (VCBO) -60V
hFE Min 140
Length 4.5mm
RoHS Status ROHS3 Compliant
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