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2SB1143T Tech Specifications

2SB1143T datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Contact Plating Tin
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Operating Temperature 150°C TJ
Published 2003
Part Status Obsolete
Number of Terminations 3
Max Power Dissipation 1.5W
Number of Elements 1
Transistor Application SWITCHING
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 50V
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Vce Saturation (Max) @ Ib, Ic 700mV @ 100mA, 2A
Max Frequency 150MHz
Collector Emitter Saturation Voltage -700mV
Collector Base Voltage (VCBO) 60V
hFE Min 100
Height 11mm
Width 3.3mm
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Transistor Element Material SILICON
Packaging Bulk
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Pin Count 3
Element Configuration Single
Gain Bandwidth Product 150MHz
Transistor Type PNP
Max Collector Current 4A
Current - Collector Cutoff (Max) 1μA ICBO
Collector Emitter Breakdown Voltage 50V
Transition Frequency 150MHz
Max Breakdown Voltage 50V
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 4A
Length 8mm
RoHS Status RoHS Compliant
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2SB1143T Documents

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