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2SB1302T-TD-E Tech Specifications

2SB1302T-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 2 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e6
Part Status Active
Number of Terminations 3
Terminal Finish Tin/Bismuth (Sn/Bi)
Max Power Dissipation 1.3W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 320MHz
Pin Count 3
Element Configuration Single
Case Connection COLLECTOR
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 10V
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 2V
Vce Saturation (Max) @ Ib, Ic 500mV @ 60mA, 3A
Current - Collector (Ic) (Max) 5A
Collector Emitter Saturation Voltage -500mV
Emitter Base Voltage (VEBO) 5V
Length 4.5mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Package / Case TO-243AA
Number of Pins 3
Operating Temperature 150°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Terminal Form FLAT
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation 1.3W
Transistor Application SWITCHING
Transistor Type PNP
Max Collector Current 5A
Current - Collector Cutoff (Max) 500nA ICBO
Collector Emitter Breakdown Voltage 20V
Transition Frequency 320MHz
Collector Base Voltage (VCBO) 25V
Height 1.5mm
Width 2.5mm
Lead Free Lead Free
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