2SC3649S-TD-E Tech Specifications

2SC3649S-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 9 Weeks
Mounting Type Surface Mount
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e6
Part Status Active
Number of Terminations 3
Terminal Finish Tin/Bismuth (Sn/Bi)
Terminal Form FLAT
Base Part Number 2SC3649
Number of Elements 1
Power Dissipation 500mW
Gain Bandwidth Product 120MHz
Transistor Type NPN
Max Collector Current 1.5A
Current - Collector Cutoff (Max) 1μA ICBO
Collector Emitter Breakdown Voltage 160V
Collector Emitter Saturation Voltage 130mV
Collector Base Voltage (VCBO) 180V
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Package / Case TO-243AA
Number of Pins 3
Operating Temperature 150°C TJ
Published 2005
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 500mW
Frequency 120MHz
Pin Count 3
Element Configuration Single
Case Connection COLLECTOR
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 160V
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 5V
Vce Saturation (Max) @ Ib, Ic 450mV @ 50mA, 500mA
Transition Frequency 120MHz
Max Breakdown Voltage 160V
Emitter Base Voltage (VEBO) 6V
RoHS Status ROHS3 Compliant
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2SC3606 TOSHIBA Specialized Hot ICs 21393
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